Investigating ripple pattern formation and damage profiles in Si and Ge induced by 100 keV Ar⁺ ion beam: a comparative study

• Indra Sulania,
• Harpreet Sondhi,
• Tanuj Kumar,
• Sunil Ojha,
• G R Umapathy,
• Ambuj Mishra,
• Ambuj Tripathi,
• Richa Krishna,
• Devesh Kumar Avasthi and
• Yogendra Kumar Mishra

Beilstein J. Nanotechnol. 2024, 15, 367–375, doi:10.3762/bjnano.15.33

• . Supporting Information Supporting Information File 74: Supplementary files. Acknowledgements The authors would like to acknowledge Inter University Accelerator Centre, New Delhi, India, for the beam time and ion beam irradiation facilities. Funding IS is grateful for the SIRE fellowship (SIR/2022/001573

Ion beam processing of DNA origami nanostructures

• Leo Sala,
• Agnes Zerolová,
• Violaine Vizcaino,
• Alain Mery,
• Alicja Domaracka,
• Hermann Rothard,
• Philippe Boduch,
• Dominik Pinkas and
• Jaroslav Kocišek

Beilstein J. Nanotechnol. 2024, 15, 207–214, doi:10.3762/bjnano.15.20

• nanometer scale and the nanometric precision of DNA origami-based assembly open possibilities in more precise tuning and control of nanofabrication. Here we analyze the consequences of ion beam irradiation on 2D DNA origami nanotriangles deposited on Si as a model substrate and resulting nanostructure

• was limited to flattening the images using the Gwyddion software [36], which was also utilized to generate height profiles of desired regions of interest. Heavy ion beam irradiation The ion beam irradiation experiments were performed at GANIL (Grand Accélérateur National d’Ions Lourds) in Caen, France

• detector was calibrated beforehand using a Faraday cup. Focused ion beam irradiation A Tescan Amber FIB-SEM was used to etch the sample surface. A Ga+ focused ion beam was used (E = 30 keV, I = 10 pA) to draw 10 μm trenches with a nominal depth of 100 nm using single line scan. This resulted in actual

Ultralow-energy amorphization of contaminated silicon samples investigated by molecular dynamics

• Grégoire R. N. Defoort-Levkov,
• Alan Bahm and
• Patrick Philipp

Beilstein J. Nanotechnol. 2023, 14, 834–849, doi:10.3762/bjnano.14.68

• other articles. Despite showing slight variations in values, the trends are almost identical. Unfortunately, none of the articles studied the effect of the incidence angle. Hence, this trend could not be compared. Regarding a minimal sample modification under ion beam irradiation, higher energies

Optimizing PMMA solutions to suppress contamination in the transfer of CVD graphene for batch production

• Chun-Da Liao,
• Andrea Capasso,
• Tiago Queirós,
• Telma Domingues,
• Fatima Cerqueira,
• Nicoleta Nicoara,
• Jérôme Borme,
• Paulo Freitas and
• Pedro Alpuim

Beilstein J. Nanotechnol. 2022, 13, 796–806, doi:10.3762/bjnano.13.70

• B2 samples. This result again supports that employing B2 PMMA yields fewer residues and may help in avoiding post-transfer treatments for advanced PMMA residue cleaning of graphene, such as annealing and ion beam irradiation [32]. The graph of the G band shift (Supporting Information File 1, Figure

Out-of-plane surface patterning by subsurface processing of polymer substrates with focused ion beams

• Serguei Chiriaev,
• Luciana Tavares,
• Vadzim Adashkevich,
• Arkadiusz J. Goszczak and
• Horst-Günter Rubahn

Beilstein J. Nanotechnol. 2020, 11, 1693–1703, doi:10.3762/bjnano.11.151

• of the polymer. Effects of subsurface and surface processes on the surface morphology have been studied for three polymer materials: poly(methyl methacrylate), polycarbonate, and polydimethylsiloxane, by using focused ion beam irradiation with He+, Ne+, and Ga+. Thin films of a Pt60Pd40 alloy and of

• investigated [21][22][23][24]. It has been shown that the ion beam irradiation can result in a significant compacting and, under certain conditions, in swelling of the irradiated PDMS areas [25]. In addition, a stiff “skin” layer produced by ion irradiation on the PDMS surface leads to the formation of ordered

Effect of localized helium ion irradiation on the performance of synthetic monolayer MoS₂ field-effect transistors

• Jakub Jadwiszczak,
• Pierce Maguire,
• Conor P. Cullen,
• Georg S. Duesberg and
• Hongzhou Zhang

Beilstein J. Nanotechnol. 2020, 11, 1329–1335, doi:10.3762/bjnano.11.117

• is particularly crucial for device applications in radiation-rich environments (e.g., space satellite technologies), since defects can be introduced by ionizing particle irradiation while the devices are in continuous operation. Recently, noble gas ion beam irradiation has opened the field to the

• exploration of nanometer-scale structural modifications of TMD devices [6][7][8]. The localized formation of defects by focused ion beam irradiation has been shown to induce unusual electronic properties in monolayer TMDs, such as pseudo-metallic phase transitions in MoS2 and WSe2 [9][10], resistive switching

Hexagonal boron nitride: a review of the emerging material platform for single-photon sources and the spin–photon interface

• Stefania Castelletto,
• Faraz A. Inam,
• Shin-ichiro Sato and
• Alberto Boretti

Beilstein J. Nanotechnol. 2020, 11, 740–769, doi:10.3762/bjnano.11.61

• controlled formation and properties. Random generation in the material using bubble strain-induced SPEs is also demonstrated in [125]. Focused ion beam irradiation was used to mill holes in the h-BN to achieve array-like SPEs around the perimeter of the holes [126]. This method yield is very high compared to

Formation of nanoripples on ZnO flat substrates and nanorods by gas cluster ion bombardment

• Xiaomei Zeng,
• Vasiliy Pelenovich,
• Bin Xing,
• Rakhim Rakhimov,
• Wenbin Zuo,
• Alexander Tolstogouzov,
• Chuansheng Liu,
• Dejun Fu and
• Xiangheng Xiao

Beilstein J. Nanotechnol. 2020, 11, 383–390, doi:10.3762/bjnano.11.29

• controlled by the orientation of the nanorod side edges. A similar “guiding” effect was observed in experiments where the boundary of irradiated regions was used to template the lateral ripples formed by focus ion beam irradiation [24]. From these findings one can conclude that the “guiding” effect is

• consequently very low probability of any composition change of the material under irradiation. Conclusion Using Ar+ cluster ion beam irradiation we have formed nanoripple array structures on ZnO single crystal substrates and facets of ZnO nanorods. The nanoripple formation is significantly governed by the

Precise local control of liquid crystal pretilt on polymer layers by focused ion beam nanopatterning

• Maxim V. Gorkunov,
• Irina V. Kasyanova,
• Vladimir V. Artemov,
• Alena V. Mamonova and
• Serguei P. Palto

Beilstein J. Nanotechnol. 2019, 10, 1691–1697, doi:10.3762/bjnano.10.164

• techniques such as patterning with nanogrooves [13][14][15] and nanoslits [16], ion-beam irradiation of specific inorganic [17] and polymer [18] substrates, subjecting of photo-controlled aligning polymers to near-threshold doses of ultraviolet radiation [19], formation of surface microdomains from

Site-controlled formation of single Si nanocrystals in a buried SiO₂ matrix using ion beam mixing

• Xiaomo Xu,
• Thomas Prüfer,
• Daniel Wolf,
• Hans-Jürgen Engelmann,
• Lothar Bischoff,
• René Hübner,
• Karl-Heinz Heinig,
• Wolfhard Möller,
• Stefan Facsko,
• Johannes von Borany and
• Gregor Hlawacek

Beilstein J. Nanotechnol. 2018, 9, 2883–2892, doi:10.3762/bjnano.9.267

• confirmed by simulation – that the change in the lateral mixing profile promotes the site-controlled Si NC formation. To obtain the necessary fully three-dimensional mixing profiles for localized ion beam irradiation, static TRI3DYN [33] simulations have been employed. In Figure 5a, the result for line

Ion beam profiling from the interaction with a freestanding 2D layer

• Ivan Shorubalko,
• Kyoungjun Choi,
• Michael Stiefel and
• Hyung Gyu Park

Beilstein J. Nanotechnol. 2017, 8, 682–687, doi:10.3762/bjnano.8.73

• focused ion beam across the knife edge can change the edge shape because of a milling effect incurred by the ion beam irradiation itself. Increasing the scan speed over the edge in order to avert the damage, gives rise to other problems such as shot noise and statistical beam fluctuations. Another

• molecules, these will decompose during the ion beam irradiation or exposure to secondary electrons and will deposit as amorphous carbon on the graphene surface competing with the sputtering process. This will result in an incorrect determination of dwell time and false beam profile curves. The second

Microstructural and plasmonic modifications in Ag–TiO₂ and Au–TiO₂ nanocomposites through ion beam irradiation

• Venkata Sai Kiran Chakravadhanula,
• Yogendra Kumar Mishra,
• Venkata Girish Kotnur,
• Devesh Kumar Avasthi,
• Thomas Strunskus,
• Vladimir Zaporotchenko,
• Dietmar Fink,
• Lorenz Kienle and
• Franz Faupel

Beilstein J. Nanotechnol. 2014, 5, 1419–1431, doi:10.3762/bjnano.5.154

• swift heavy ions. Au–TiO2 and Ag–TiO2 nanocomposite thin films with varying metal volume fractions were deposited by co-sputtering and were subsequently irradiated by 100 MeV Ag8+ ions at various ion fluences. The morphology of these nanocomposite thin films before and after ion beam irradiation has

• been reported but such studies about metal–TiO2 nanocomposites would be very interesting. Titania is a wide band gap semiconductor, and the tuning of the SPR in such a matrix by ion beam irradiation is another aim of the present work. Hence, the effects of swift heavy ion irradiation on metal–TiO2

• area electron diffraction patterns of Figure 5b–d. In addition, reflections corresponding to the metrics from TiO [43][44] were observed along with large TiO crystals after ion beam irradiation (see below in Figure 8 and Figure 9). Several studies on SHI-induced crystallization of amorphous TiO2 thin

Synthesis of embedded Au nanostructures by ion irradiation: influence of ion induced viscous flow and sputtering

• Udai B. Singh,
• D. C. Agarwal,
• S. A. Khan,
• S. Mohapatra,
• H. Amekura,
• D. P. Datta,
• Ajay Kumar,
• R. K. Choudhury,
• T. K. Chan,
• Thomas Osipowicz and
• D. K. Avasthi

Beilstein J. Nanotechnol. 2014, 5, 105–110, doi:10.3762/bjnano.5.10

• Au nanoparticles into the glass substrate. Keywords: embedded nanoparticles; ion beam irradiation; recoil implantation; Introduction Noble-metal nanoparticles (NPs) are of great interest due to their large surface-to-volume ratio and their enhanced absorption of visible light. The shape- and size

• this problem. Stepanov et al. [22] have shown that the implantation of 60 keV Ag ions with fluences of (2–4) × 1016 ions/cm2 leads to the formation of silver NPs in glass near room temperature. It has been shown that Au atoms get buried [10] during the ion beam irradiation of thin films. Ion beam

• irradiation that was performed by Hu et al. on Pt NPs on a SiO2 substrate indicated a sinking-in of the NPs because of an ion-induced viscous flow [23]. Klimmer et al. [24] have also shown that embedded Au NPs can be synthesized by ion beam irradiation of Au NPs on the surface due to sputtering and ion

Challenges in realizing ultraflat materials surfaces

• Takashi Yatsui,
• Wataru Nomura,
• Fabrice Stehlin,
• Olivier Soppera,
• Makoto Naruse and
• Motoichi Ohtsu

Beilstein J. Nanotechnol. 2013, 4, 875–885, doi:10.3762/bjnano.4.99

• approach for reducing the surface roughness is ion-beam smoothing [15]. Ion-beam irradiation at angles that are near grazing incidence preferentially removes large protrusions from the surface. This way a smoothing of wide areas can be achieved, while the surface damage is reduced. In addition, the use of

Nano-structuring, surface and bulk modification with a focused helium ion beam

• Daniel Fox,
• Yanhui Chen,
• Colm C. Faulkner and
• Hongzhou Zhang

Beilstein J. Nanotechnol. 2012, 3, 579–585, doi:10.3762/bjnano.3.67

• ion microscopy; nanofabrication; TEM; Introduction Ion beams are widely used to modify the physical and chemical properties of the surface of materials with a high degree of control. Ion beam irradiation can be used to modify and control a material’s optical [1], electrical [2], magnetic [3] and

• FIB lift-out. (b) HAADF image of the sample after HIM modification. (a) SEM image of the silicon lamella (sample 3) after FIB lift-out and a 5 keV gallium ion polish. (b) Illustration of the geometry of the helium ion beam irradiation. The red arrow represents the helium ions which are incident on the